Growth of Zinc Oxide Nanocombs on Porous Silicon Layer by Thermal-Evaporation Method

Khaldun A. Salman

doi:doi:10.11648/j.am.20150402.12

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Growth of Zinc Oxide Nanocombs on Porous Silicon Layer by Thermal-Evaporation Method

Khaldun A. Salman

Published in Advances in Materials (Volume 4, Issue 2)

Received: 15 February 2015 Accepted: 26 February 2015 Published: 8 March 2015

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Abstract

Zinc oxide (ZnO) film was deposited on a porous silicon (PS) layer prepared by electrochemical etching through the thermal-evaporation method. ZnO nanocombs structure arrays were directly fabricated on the PS substrate through zinc powder evaporation, which uses a simple thermal-evaporation method without a catalyst. The ZnO nanocombs were highly oriented along the c-axis perpendicular to the PS layer. The average crystallite size of the PS and the ZnO nanocombs were 17.06 and 17.94 nm, respectively. The photoluminescence emission spectra of the ZnO nanocombs grown on the PS layer showed three emission peaks. The two peaks located at 387.5 and 605 nm were caused by the ZnO nanocombs, whereas the third peak located at 637.5 nm was caused by the PS layer. The ZnO nanocombs grown on the PS layer exhibited exceptional light trapping at wavelengths ranging from 400 to 1000 nm, which was expected to increase the efficiency of nano-electronic and nano-optical devices such as (solar cells).

Published in	Advances in Materials (Volume 4, Issue 2)
DOI	10.11648/j.am.20150402.12
Page(s)	30-35
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2015. Published by Science Publishing Group

Keywords

Zinc Oxide Film, Nanocombs, Porous Silicon Layer, Electrochemical Etching

References

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APA Style

Khaldun A. Salman. (2015). Growth of Zinc Oxide Nanocombs on Porous Silicon Layer by Thermal-Evaporation Method. Advances in Materials, 4(2), 30-35. https://doi.org/10.11648/j.am.20150402.12

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ACS Style

Khaldun A. Salman. Growth of Zinc Oxide Nanocombs on Porous Silicon Layer by Thermal-Evaporation Method. Adv. Mater. 2015, 4(2), 30-35. doi: 10.11648/j.am.20150402.12

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AMA Style

Khaldun A. Salman. Growth of Zinc Oxide Nanocombs on Porous Silicon Layer by Thermal-Evaporation Method. Adv Mater. 2015;4(2):30-35. doi: 10.11648/j.am.20150402.12

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@article{10.11648/j.am.20150402.12,
  author = {Khaldun A. Salman},
  title = {Growth of Zinc Oxide Nanocombs on Porous Silicon Layer by Thermal-Evaporation Method},
  journal = {Advances in Materials},
  volume = {4},
  number = {2},
  pages = {30-35},
  doi = {10.11648/j.am.20150402.12},
  url = {https://doi.org/10.11648/j.am.20150402.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.am.20150402.12},
  abstract = {Zinc oxide (ZnO) film was deposited on a porous silicon (PS) layer prepared by electrochemical etching through the thermal-evaporation method. ZnO nanocombs structure arrays were directly fabricated on the PS substrate through zinc powder evaporation, which uses a simple thermal-evaporation method without a catalyst. The ZnO nanocombs were highly oriented along the c-axis perpendicular to the PS layer. The average crystallite size of the PS and the ZnO nanocombs were 17.06 and 17.94 nm, respectively. The photoluminescence emission spectra of the ZnO nanocombs grown on the PS layer showed three emission peaks. The two peaks located at 387.5 and 605 nm were caused by the ZnO nanocombs, whereas the third peak located at 637.5 nm was caused by the PS layer. The ZnO nanocombs grown on the PS layer exhibited exceptional light trapping at wavelengths ranging from 400 to 1000 nm, which was expected to increase the efficiency of nano-electronic and nano-optical devices such as (solar cells).},
 year = {2015}
}

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TY  - JOUR
T1  - Growth of Zinc Oxide Nanocombs on Porous Silicon Layer by Thermal-Evaporation Method
AU  - Khaldun A. Salman
Y1  - 2015/03/08
PY  - 2015
N1  - https://doi.org/10.11648/j.am.20150402.12
DO  - 10.11648/j.am.20150402.12
T2  - Advances in Materials
JF  - Advances in Materials
JO  - Advances in Materials
SP  - 30
EP  - 35
PB  - Science Publishing Group
SN  - 2327-252X
UR  - https://doi.org/10.11648/j.am.20150402.12
AB  - Zinc oxide (ZnO) film was deposited on a porous silicon (PS) layer prepared by electrochemical etching through the thermal-evaporation method. ZnO nanocombs structure arrays were directly fabricated on the PS substrate through zinc powder evaporation, which uses a simple thermal-evaporation method without a catalyst. The ZnO nanocombs were highly oriented along the c-axis perpendicular to the PS layer. The average crystallite size of the PS and the ZnO nanocombs were 17.06 and 17.94 nm, respectively. The photoluminescence emission spectra of the ZnO nanocombs grown on the PS layer showed three emission peaks. The two peaks located at 387.5 and 605 nm were caused by the ZnO nanocombs, whereas the third peak located at 637.5 nm was caused by the PS layer. The ZnO nanocombs grown on the PS layer exhibited exceptional light trapping at wavelengths ranging from 400 to 1000 nm, which was expected to increase the efficiency of nano-electronic and nano-optical devices such as (solar cells).
VL  - 4
IS  - 2
ER  -

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Author Information

Khaldun A. Salman

Solar Energy Researches Department, Al-Nahrain Nanorenewable Energy Researches Center, Al-Nahrain University, Baghdad, Iraq

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Plain Text BibTeX RIS

APA Style

Khaldun A. Salman. (2015). Growth of Zinc Oxide Nanocombs on Porous Silicon Layer by Thermal-Evaporation Method. Advances in Materials, 4(2), 30-35. https://doi.org/10.11648/j.am.20150402.12

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ACS Style

Khaldun A. Salman. Growth of Zinc Oxide Nanocombs on Porous Silicon Layer by Thermal-Evaporation Method. Adv. Mater. 2015, 4(2), 30-35. doi: 10.11648/j.am.20150402.12

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AMA Style

Khaldun A. Salman. Growth of Zinc Oxide Nanocombs on Porous Silicon Layer by Thermal-Evaporation Method. Adv Mater. 2015;4(2):30-35. doi: 10.11648/j.am.20150402.12

Copy | Download

@article{10.11648/j.am.20150402.12,
  author = {Khaldun A. Salman},
  title = {Growth of Zinc Oxide Nanocombs on Porous Silicon Layer by Thermal-Evaporation Method},
  journal = {Advances in Materials},
  volume = {4},
  number = {2},
  pages = {30-35},
  doi = {10.11648/j.am.20150402.12},
  url = {https://doi.org/10.11648/j.am.20150402.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.am.20150402.12},
  abstract = {Zinc oxide (ZnO) film was deposited on a porous silicon (PS) layer prepared by electrochemical etching through the thermal-evaporation method. ZnO nanocombs structure arrays were directly fabricated on the PS substrate through zinc powder evaporation, which uses a simple thermal-evaporation method without a catalyst. The ZnO nanocombs were highly oriented along the c-axis perpendicular to the PS layer. The average crystallite size of the PS and the ZnO nanocombs were 17.06 and 17.94 nm, respectively. The photoluminescence emission spectra of the ZnO nanocombs grown on the PS layer showed three emission peaks. The two peaks located at 387.5 and 605 nm were caused by the ZnO nanocombs, whereas the third peak located at 637.5 nm was caused by the PS layer. The ZnO nanocombs grown on the PS layer exhibited exceptional light trapping at wavelengths ranging from 400 to 1000 nm, which was expected to increase the efficiency of nano-electronic and nano-optical devices such as (solar cells).},
 year = {2015}
}

Copy | Download

TY  - JOUR
T1  - Growth of Zinc Oxide Nanocombs on Porous Silicon Layer by Thermal-Evaporation Method
AU  - Khaldun A. Salman
Y1  - 2015/03/08
PY  - 2015
N1  - https://doi.org/10.11648/j.am.20150402.12
DO  - 10.11648/j.am.20150402.12
T2  - Advances in Materials
JF  - Advances in Materials
JO  - Advances in Materials
SP  - 30
EP  - 35
PB  - Science Publishing Group
SN  - 2327-252X
UR  - https://doi.org/10.11648/j.am.20150402.12
AB  - Zinc oxide (ZnO) film was deposited on a porous silicon (PS) layer prepared by electrochemical etching through the thermal-evaporation method. ZnO nanocombs structure arrays were directly fabricated on the PS substrate through zinc powder evaporation, which uses a simple thermal-evaporation method without a catalyst. The ZnO nanocombs were highly oriented along the c-axis perpendicular to the PS layer. The average crystallite size of the PS and the ZnO nanocombs were 17.06 and 17.94 nm, respectively. The photoluminescence emission spectra of the ZnO nanocombs grown on the PS layer showed three emission peaks. The two peaks located at 387.5 and 605 nm were caused by the ZnO nanocombs, whereas the third peak located at 637.5 nm was caused by the PS layer. The ZnO nanocombs grown on the PS layer exhibited exceptional light trapping at wavelengths ranging from 400 to 1000 nm, which was expected to increase the efficiency of nano-electronic and nano-optical devices such as (solar cells).
VL  - 4
IS  - 2
ER  -

Copy | Download